IPB79CN10N G

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Overview of IPB79CN10N G

Part NumberIPB79CN10N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 13A D2PAK
DatasheetsDownload IPB79CN10N G Datasheet PDFPDF Icon
Price for IPB79CN10N G

Specification of IPB79CN10N G

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
79mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12A
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
716 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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